TSMC has been very aggressive with its approach to silicon manufacturing, with more investments into its R&D that now match or beat the capex investments of Intel. That indicates a strong demand for new technologies and TSMC's strong will not drop out of the never-ending race for more performance and smaller node sizes.
According to the sources over at DigiTimes
, TSMC has acquired as much as 30 hectares of land in the Southern Taiwan Science Park to begin the construction of its fabs that are supposed to start high-volume manufacturing 3 nm node in 2023. Construction of 3 nm manufacturing facilities are set to begin in 2020 when TSMC will lay the groundwork for the new fab. The 3 nm semiconductor node is expected to be TSMC's third attempt at EUV lithography, right after the 7 nm+, and 5 nm nodes which are also based on EUV technology.