CXMT Defies US Sanctions with High-Speed DDR5 and LPDDR5X Memory DebutChina's ChangXin Memory Technologies (CXMT), a DRAM manufacturer facing stringent US export restrictions, has unveiled its latest DDR5-8000 and LPDDR5X-10667 memory products at the 22nd China International Semiconductor Expo on November 23, 2025. The DDR5 chips operate at 8,000 MT/s with capacities of 16 Gb (2 GB) and 24 Gb (3 GB), supporting various module types including UDIMM, SODIMM, and RDIMM for PCs and servers. Meanwhile, the LPDDR5X reaches 10,667 MT/s and offers packaging options in 12 GB, 16 GB, and 24 GB for mobile devices. These advancements demonstrate CXMT's progress toward semiconductor self-sufficiency, despite being on the US Entity List since 2020, which limits access to advanced fabrication tools. Experts note that while the speeds rival those from Samsung and SK Hynix, CXMT likely relies on older process nodes above 18nm, raising questions about high-volume production feasibility. CXMT has already entered mass production for lower-speed LPDDR5X variants at 8,533 Mbps and 9,600 Mbps earlier in 2025, with the 10,667 Mbps version now available for sampling. This move could expand global DRAM supply and reduce China's reliance on foreign suppliers amid ongoing trade tensions. Industry observers suggest the products are initially targeted at the domestic market, potentially challenging international giants in consumer and AI applications. The announcement highlights Beijing's push for indigenous tech development, even as US sanctions aim to curb advancements in critical sectors.