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Samsung First to Produce 16Gb NAND Flash with 51nm Technology - TechAmok
Samsung First to Produce 16Gb NAND Flash with 51nm Technology - [hardware] 04:40 AM EDT - Apr,30 2007 - post a comment Samsung Electronics announced today that it has become
the first to begin mass producing 16 gigabit (or 2GB) NAND flash, the
highest capacity memory chip now available. Samsung said it will fabricate the
chips in 51 nanometers (nm), the finest process technology to be used in memory
mass production to date. Samsung boasts that the new 51nm process is 60% more
efficient than its existing 60nm process. The Korean firm also notes that it has
managed to transition to 51nm process technology just eight months after
announcing its first 8Gb NAND flash chip based on a 60nm process last August.
Density isn't the 16Gb chip's only upside, though. Samsung's new baby has a read
speed of 30MB/s and a write speed of 8MB/s, which the firm compares to 17MB/s
and 4.4MB/s speeds for existing 60nm multi-level cell-based flash chips. Samsung
expects the new chip to hit the mainstream market late this year and to allow
for flash memory cards with capacities of as much as 16GB. |
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