TSMC has been very aggressive with its approach to silicon manufacturing, with more investments into its R&D that now match or beat the capex investments of Intel. That indicates a strong demand for new technologies and TSMC's strong will not drop out of the never-ending race for more performance and smaller node sizes. According to the sources over at DigiTimes, TSMC has acquired as much as 30 hectares of land in the Southern Taiwan Science Park to begin the construction of its fabs that are supposed to start high-volume manufacturing 3 nm node in 2023. Construction of 3 nm manufacturing facilities are set to begin in 2020 when TSMC will lay the groundwork for the new fab. The 3 nm semiconductor node is expected to be TSMC's third attempt at EUV lithography, right after the 7 nm+, and 5 nm nodes which are also based on EUV technology.